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Resistive switching behavior of Ag/Mg0.2Zn0.8O/ZnMn2O4/p+-Si heterostructure devices for nonvolatile memory applications

Crossref DOI link: https://doi.org/10.1007/s11595-017-1552-7

Published Online: 2017-02-12

Published Print: 2017-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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