Physical properties of Al-doped ZnO and Ga-doped ZnO thin films prepared by direct current sputtering at room temperature
Crossref DOI link: https://doi.org/10.1007/s11595-017-1563-4
Published Online: 2017-02-12
Published Print: 2017-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Zhu, Ke
Yang, Ye
Li, Jia
Song, Weijie
License valid from 2017-02-01
