Resistance Switching Behaviour and Properties of Ag/La0.5Mg0.5MnO3/p+-Si with Different Thicknesses of Resistance Films Fabricated through Sol—Gel Method
Crossref DOI link: https://doi.org/10.1007/s11595-019-2089-8
Published Online: 2019-06-10
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yan, Shuaishuai
Wang, Hua
Xu, Jiwen
Yang, Ling
Text and Data Mining valid from 2019-06-01
Version of Record valid from 2019-06-01
Article History
Received: 18 June 2018
Accepted: 25 April 2019
First Online: 10 June 2019