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Improvement of Ge MOS Electrical and Interfacial Characteristics by using NdAlON as Interfacial Passivation Layer

Crossref DOI link: https://doi.org/10.1007/s11595-021-2441-7

Published Online: 2021-08-29

Published Print: 2021-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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