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Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory

Crossref DOI link: https://doi.org/10.1007/s11664-014-3265-4

Published Online: 2014-06-21

Published Print: 2014-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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