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Comparative Study of Shallow Acceptor Levels in Unintentionally Doped p-Type GaSe Crystals Prepared by the Bridgman and Liquid Phase Solution Growth Methods

Crossref DOI link: https://doi.org/10.1007/s11664-014-3284-1

Published Online: 2014-07-08

Published Print: 2014-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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