Investigation of the Hydrogen Silsesquioxane (HSQ) Electron Resist as Insulating Material in Phase Change Memory Devices
Crossref DOI link: https://doi.org/10.1007/s11664-014-3390-0
Published Online: 2014-09-23
Published Print: 2015-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Zhou, Jiao
Ji, Hongkai
Lan, Tian
Yan, Junbing
Zhou, Wenli
Miao, Xiangshui
Text and Data Mining valid from 2014-09-23