Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc–Tin Oxide Thin-Film Transistors
Crossref DOI link: https://doi.org/10.1007/s11664-014-3554-y
Published Online: 2014-12-10
Published Print: 2015-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Han, Dong-Suk
Park, Jae-Hyung
Kang, Min-Soo
Shin, So-Ra
Jung, Yeon-Jae
Choi, Duck-Kyun
Park, Jong-Wan
Text and Data Mining valid from 2014-12-10