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Gettering of Luminescent Point Defects along Step Bunching in 4H-SiC Epitaxial Layers by Ultraviolet Excitation

Crossref DOI link: https://doi.org/10.1007/s11664-014-3616-1

Published Online: 2015-02-05

Published Print: 2015-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy