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Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications

Crossref DOI link: https://doi.org/10.1007/s11664-015-3713-9

Published Online: 2015-03-17

Published Print: 2015-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Wenisch, J.

Schirmacher, W.

Wollrab, R.

Eich, D.

Hanna, S.

Breiter, R.

Lutz, H.

Figgemeier, H.
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