Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II–VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic
Crossref DOI link: https://doi.org/10.1007/s11664-015-3827-0
Published Online: 2015-05-21
Published Print: 2015-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jain, F.
Chan, P.-Y.
Lingalugari, M.
Kondo, J.
Suarez, E.
Gogna, P.
Chandy, J.
Heller, E.
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