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Comparative Structural Characterization of Thin Al0.2Ga0.8 N/GaN and In0.17Al0.83N/GaN Heterostructures Grown on Si(111), by MBE, with Variation of Buffer Thickness

Crossref DOI link: https://doi.org/10.1007/s11664-015-3943-x

Published Online: 2015-08-05

Published Print: 2015-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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