Interfacial Electrode-Driven Enhancement of the Switching Parameters of a Copper Oxide-Based Resistive Random-Access Memory Device
Crossref DOI link: https://doi.org/10.1007/s11664-015-4074-0
Published Online: 2015-10-16
Published Print: 2016-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sangani, L. D. Varma
Kumar, Ch. Ravi
Krishna, M. Ghanashyam http://orcid.org/0000-0002-9304-8243
Text and Data Mining valid from 2015-10-16