GaN High-Electron-Mobility Transistor with WN x /Cu Gate for High-Power Applications
Crossref DOI link: https://doi.org/10.1007/s11664-015-4118-5
Published Online: 2015-10-16
Published Print: 2015-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hsieh, Ting-En
Lin, Yueh-Chin
Li, Fang-Ming
Shi, Wang-Cheng
Huang, Yu-Xiang
Lan, Wei-Cheng
Chin, Ping-Chieh
Chang, Edward Yi
Text and Data Mining valid from 2015-10-16