Formation of Ni Diffusion-Induced Surface Traps in GaN/Al x Ga1−x N/GaN Heterostructures on Silicon Substrate During Gate Metal Deposition
Crossref DOI link: https://doi.org/10.1007/s11664-015-4135-4
Published Online: 2015-10-19
Published Print: 2016-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kajen, R. S. https://orcid.org/0000-0003-2734-8819
Bera, L. K.
Tan, H. R.
Dolmanan, S. B.
Cheong, Z. W.
Tripathy, S.
Funding for this research was provided by:
A*STAR-SERC GaN-on-Si Thematic Strategic Research Programme (102 169 0126)
Text and Data Mining valid from 2015-10-19