Preparation of CuSbS2 Thin Films by Co-Sputtering and Solar Cell Devices with Band Gap-Adjustable n-Type InGaN as a Substitute of ZnO
Crossref DOI link: https://doi.org/10.1007/s11664-015-4174-x
Published Online: 2015-11-09
Published Print: 2016-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, Wei-Liang
Kuo, Dong-Hau
Tuan, Thi Tran Anh
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