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Well Thickness Dependence of the Internal Quantum Efficiency and Carrier Concentration in GaN-Based Multiple Quantum Well Light-Emitting Diodes

Crossref DOI link: https://doi.org/10.1007/s11664-015-4203-9

Published Online: 2015-11-23

Published Print: 2016-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zhao, Kun

Yang, Xiufang

Xu, Bing

Li, Ding

Wang, Cunda

Feng, Liefeng
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (11204209, 60876035, 11004149, 601076015, and 61177014)

Tianjin Natural Science Foundation of the key project of China (13JCZDJC32800)

Natural Science Foundation of Hainan Province (613173)
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