Dopant in Near-Surface Semiconductor Layers of Metal–Insulator–Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy
Crossref DOI link: https://doi.org/10.1007/s11664-015-4239-x
Published Online: 2015-12-02
Published Print: 2016-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Voitsekhovskii, A. V.
Nesmelov, S. N.
Dzyadukh, S. M.
Funding for this research was provided by:
The Tomsk State University Academic D.I. Mendeleev Fund Program (8.2.10.2015)
The State Task (16.1032.2014/K)
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