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Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile

Crossref DOI link: https://doi.org/10.1007/s11664-015-4254-y

Published Online: 2016-01-04

Published Print: 2016-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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