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Fabrication of Carrier-Doped Si Nanoarchitecture for Thermoelectric Material by Ultrathin SiO2 Film Technique

Crossref DOI link: https://doi.org/10.1007/s11664-015-4294-3

Published Online: 2015-12-29

Published Print: 2016-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Ueda, Tomohiro

Sakane, Shunya

Ishibe, Takafumi

Watanabe, Kentaro

Takeuchi, Shotaro

Sakai, Akira

Nakamura, Yoshiaki
Funding

Funding for this research was provided by:

JST PRESTO

Grant-in-Aid for Scientific Research B (25286026)

Grant-in-Aid for Exploratory Research (15K13276)

TEPCO Memorial Foundation, Research Grant
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