Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE
Crossref DOI link: https://doi.org/10.1007/s11664-015-4305-4
Published Online: 2015-12-30
Published Print: 2016-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Reshchikov, M. A.
Usikov, A.
Helava, H.
Makarov, Yu.
Puzyk, M. V.
Papchenko, B. P.
Funding for this research was provided by:
Ministry of Education and Science of Russian Federation (14.575.21.0054)
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