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Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers

Crossref DOI link: https://doi.org/10.1007/s11664-016-4378-8

Published Online: 2016-02-26

Published Print: 2016-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Yang, Yu https://orcid.org/0000-0002-6996-9835
Guo, Jianqiu

Goue, Ouloide

Raghothamachar, Balaji

Dudley, Michael

Chung, Gil

Sanchez, Edward

Quast, Jeff

Manning, Ian

Hansen, Darren
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