Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations
Crossref DOI link: https://doi.org/10.1007/s11664-016-4506-5
Published Online: 2016-04-14
Published Print: 2016-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kerlain, A.
Brunner, A.
Sam-Giao, D.
Pére-Laperne, N.
Rubaldo, L.
Destefanis, V.
Rochette, F.
Cervera, C.
Text and Data Mining valid from 2016-04-14