Laterally Inhomogeneous Barrier Analysis Using Capacitance–Voltage Characteristics of Identically Fabricated Schottky Diodes
Crossref DOI link: https://doi.org/10.1007/s11664-016-4546-x
Published Online: 2016-05-11
Published Print: 2016-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Çavdar, Şükrü
Tuğluoğlu, Nihat
Akgül, Kübra Bengin
Koralay, Haluk
Funding for this research was provided by:
BAP Office of Gazi University (05/2013-06)
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