Crossmark

Study of Hf-Ti-O Thin Film as High-k Gate Dielectric and Application for ETSOI MOSFETs

Crossref DOI link: https://doi.org/10.1007/s11664-016-4601-7

Published Online: 2016-05-19

Published Print: 2016-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Chen, Xiaoqiang

Zhao, Hongbin

Xiong, Yuhua

Wei, Feng

Du, Jun

Tang, Zhaoyun

Tang, Bo

Yan, Jiang
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (51102020)

National Science and Technology Major Project of China (2013ZX02303-001-002)

National Natural Science Foundation of China (51477012)
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