Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate
Crossref DOI link: https://doi.org/10.1007/s11664-016-4694-z
Published Online: 2016-06-22
Published Print: 2016-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Goh, Kian Heng
Haseeb, A. S. M. A.
Wong, Yew Hoong
Funding for this research was provided by:
Universiti Malaya (UMRG RP024A-13AET, PPP (PG048-2014A))
Kementerian Sains, Teknologi dan Inovasi (Science Fund (SF011-2015))
License valid from 2016-06-22