Influence of Oxygen Partial Pressure on Opto-Electrical Properties, Crystallite Size and Dislocation Density of Sn Doped In $$_2$$ 2 O $$_3$$ 3 Nanostructures
Crossref DOI link: https://doi.org/10.1007/s11664-016-4697-9
Published Online: 2016-06-15
Published Print: 2016-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Soleimanian, Vishtasb
Ghasemi Varnamkhasti, Mohsen
License valid from 2016-06-15