Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness
Crossref DOI link: https://doi.org/10.1007/s11664-016-4760-6
Published Online: 2016-07-11
Published Print: 2016-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Yucheng
Jia, Renxu
Zhao, Yanli
Li, Chengzhan
Zhang, Yuming
Funding for this research was provided by:
National Natural Science Foundation of China (51272202, 51472196)
License valid from 2016-07-11