Effect of O2 Fraction in the Sputter Gas on the Electrical Properties of Amorphous In-Zn-O and the Thin Film Transistor Performance
Crossref DOI link: https://doi.org/10.1007/s11664-016-5008-1
Published Online: 2016-10-12
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Reed, Austin S.
Paine, David C.
Lee, Sunghwan http://orcid.org/0000-0001-6688-8995
Funding for this research was provided by:
Baylor University (faculty start-up funds)
National Science Foundation (DMR-1409590)
K-LAB, Korea
Text and Data Mining valid from 2016-10-12
Version of Record valid from 2016-10-12
Article History
Received: 11 August 2016
Accepted: 28 September 2016
First Online: 12 October 2016