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Numerical Investigation of InGaN Light-Emitting Diode with Al/In-Graded p-AlGaN/InGaN Superlattice Electron-Blocking Layer

Crossref DOI link: https://doi.org/10.1007/s11664-016-5082-4

Published Online: 2016-11-03

Published Print: 2017-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zeng, Si-Ming

Zheng, Shu-Wen

Fan, Guang-Han
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (61176043)

Science and Technology Plan Project of Guangdong Province (2015B010112002)
License Information

License valid from 2016-11-03