Enhancement of Electrical Properties of TiO2−x Oxide Semiconductor by d-Orbital Ordering Using Swift Heavy Ni-Ion Irradiation at Room Temperature
Crossref DOI link: https://doi.org/10.1007/s11664-016-5116-y
Published Online: 2016-11-11
Published Print: 2017-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Cho, S. H.
Jun, B. H.
Chung, K. B. http://orcid.org/0000-0001-8877-5297
Funding for this research was provided by:
National Research Foundation of Korea (NRF-2013M2A8A1035822, NRF-2015M2A8A1045181)
License valid from 2016-11-11