Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices
Crossref DOI link: https://doi.org/10.1007/s11664-016-5148-3
Published Online: 2016-12-01
Published Print: 2017-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, Kai-Huang https://orcid.org/0000-0003-2367-5900
Cheng, Chien-Min
Kao, Ming-Cheng
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Wu, Sean
Su, Feng-Yi
Funding for this research was provided by:
National Science Council (103-2633-E-272-001)
License valid from 2016-12-01