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Work Function Tuning and Doping Optimization of 22-nm HKMG Raised SiGe/SiC Source–Drain FinFETs

Crossref DOI link: https://doi.org/10.1007/s11664-016-5199-5

Published Online: 2017-01-04

Published Print: 2017-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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