Variations of Contact Resistance in Dual-Gated Monolayer Molybdenum Disulfide Transistors Depending on Gate Bias Selection
Crossref DOI link: https://doi.org/10.1007/s11664-016-5276-9
Published Online: 2017-01-20
Published Print: 2017-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tran, P. X.
License valid from 2017-01-20