High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method
Crossref DOI link: https://doi.org/10.1007/s11664-017-5534-5
Published Online: 2017-04-27
Published Print: 2017-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lin, Yung-Hao
Lee, Ching-Ting
Funding for this research was provided by:
Ministry of Science and Technology, Taiwan (MOST 104-2221-E-006-004)
License valid from 2017-04-27