Characteristics of Extended-Gate Field-Effect Transistor (EGFET) Based on Porous n-Type (111) Silicon for Use in pH Sensors
Crossref DOI link: https://doi.org/10.1007/s11664-017-5604-8
Published Online: 2017-06-05
Published Print: 2017-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ahmed, Naser M.
Kabaa, E. A.
Jaafar, M. S.
Omar, A. F.
License valid from 2017-06-05