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Carrier Transport Mechanism and Band Offsets at the Interface of ZnS/n-Si (111) Heterojunctions Fabricated by Vacuum Thermal Evaporation

Crossref DOI link: https://doi.org/10.1007/s11664-017-5659-6

Published Online: 2017-07-05

Published Print: 2017-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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