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Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation

Crossref DOI link: https://doi.org/10.1007/s11664-017-5677-4

Published Online: 2017-07-18

Published Print: 2017-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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