Crossmark

Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory

Crossref DOI link: https://doi.org/10.1007/s11664-017-5787-z

Published Online: 2017-09-14

Published Print: 2018-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Ryu, Sungyeon

Kim, Seong Keun

Choi, Byung Joon
Funding

Funding for this research was provided by:

Ministry of Education (2014R1A1A2054597)

Ministry of Science, ICT and Future Planning (2009-0082580)
License Information

License valid from 2017-09-14