Analysis of the Forward I–V Characteristics of Al-Implanted 4H-SiC p-i-n Diodes with Modeling of Recombination and Trapping Effects Due to Intrinsic and Doping-Induced Defect States
Crossref DOI link: https://doi.org/10.1007/s11664-017-5916-8
Published Online: 2017-11-22
Published Print: 2018-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Megherbi, M. L.
Pezzimenti, F. http://orcid.org/0000-0002-8410-0142
Dehimi, L.
Saadoune, A.
Della Corte, F. G.
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