Crossmark

The Effect of SbI3 Doping on the Structure and Electrical Properties of n-Type Bi1.8Sb0.2Te2.85Se0.15 Alloy Prepared by the Free Growth Method

Crossref DOI link: https://doi.org/10.1007/s11664-017-5954-2

Published Online: 2017-11-21

Published Print: 2018-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Wang, Xiaoyu

Yu, Yuan

Zhu, Bin

Gao, Na

Huang, Zhongyue

Xiang, Bo

Zu, Fangqiu
Funding

Funding for this research was provided by:

The National Nature Science Foundation of China (51371073)

The National Key Basic Research Program of China (2012CB825702)
License Information

License valid from 2017-11-21