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Theoretical Prediction of an Antimony-Silicon Monolayer $$(\hbox {penta-Sb}_{2}\hbox {Si})$$(penta-Sb2Si): Band Gap Engineering by Strain Effect

Crossref DOI link: https://doi.org/10.1007/s11664-017-6045-0

Published Online: 2018-01-09

Published Print: 2018-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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