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Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering

Crossref DOI link: https://doi.org/10.1007/s11664-017-6058-8

Published Online: 2018-01-16

Published Print: 2018-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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