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First-Principles Investigation of Electronic, Half-Metallic, and Optical Properties of Ti-Doped MgTe Semiconductors with Various Concentrations of Dopant

Crossref DOI link: https://doi.org/10.1007/s11664-018-6085-0

Published Online: 2018-02-01

Published Print: 2018-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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