Crossmark

The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications

Crossref DOI link: https://doi.org/10.1007/s11664-018-6105-0

Published Online: 2018-02-07

Published Print: 2018-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Dueñas, S. https://orcid.org/0000-0002-2328-1752
Castán, H.

García, H.

Ossorio, O. G.

Domínguez, L. A.

Seemen, H.

Tamm, A.

Kukli, K.

Aarik, J.
Funding

Funding for this research was provided by:

Ministerio de Economía y Competitividad (TEC2014-52152-C3-3-R)

Estonian Research Agency (PUT170, IUT2-24)

European Regional Development Fund (TK134, TK141)
License Information

Text and Data Mining valid from 2018-02-07
More Information

Article History

Received: 13 November 2017

Accepted: 24 January 2018

First Online: 7 February 2018