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Effect of Electrode Materials on Nonvolatile Resistive Switching Memory Behaviors of Metal/In2S3/Mo/Glass Devices

Crossref DOI link: https://doi.org/10.1007/s11664-018-6436-x

Published Online: 2018-06-18

Published Print: 2018-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Guo, Tao

Zhang, Xuejiao

Sun, Bai

Mao, Shuangsuo

Zhu, Shouhui

Zheng, Pingping

Xia, Yudong

Yu, Zhou
Funding

Funding for this research was provided by:

the National Natural Science Foundation of China (51377138, 11504303)

the Youth Fund of Science and Technology of Hebei Colleges (QN2017010)
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Article History

Received: 31 October 2017

Accepted: 5 June 2018

First Online: 18 June 2018