Modified Interface Properties of Au/n-type GaN Schottky Junction with a High-k Ba0.6Sr0.4TiO3 Insulating Layer
Crossref DOI link: https://doi.org/10.1007/s11664-018-6539-4
Published Online: 2018-08-02
Published Print: 2018-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Niteesh Reddy, Varra
Gunasekhar, K. R.
Text and Data Mining valid from 2018-08-02
Article History
Received: 22 December 2017
Accepted: 18 July 2018
First Online: 2 August 2018