Influence of Doping and Splitting of Source in a Group IV Material Based Tunnel Field Effect Transistor
Crossref DOI link: https://doi.org/10.1007/s11664-019-06923-2
Published Online: 2019-01-18
Published Print: 2019-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Basu, Rikmantra
Giri, Preeti
Kumar, Harshvardhan http://orcid.org/0000-0002-4803-810X
Text and Data Mining valid from 2019-01-18
Article History
Received: 5 June 2018
Accepted: 3 January 2019
First Online: 18 January 2019