Photogalvanic Etching of n-GaN for Three-Dimensional Electronics
Crossref DOI link: https://doi.org/10.1007/s11664-019-06982-5
Published Online: 2019-01-31
Published Print: 2019-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Dryden, Daniel M. http://orcid.org/0000-0003-3421-7913
Nikolic, Rebecca J.
Islam, M. Saif
Funding for this research was provided by:
Army Research Office (ARO- W911NF-14-4-0341)
U.S. Department of Energy (DE-AC52-07NA27344)
Text and Data Mining valid from 2019-01-31
Version of Record valid from 2019-01-31
Article History
Received: 29 September 2018
Accepted: 18 January 2019
First Online: 31 January 2019