Parameterized Comparison of Nanotransistors Based on CNT and GNR Materials: Effect of Variation in Gate Oxide Thickness and Dielectric Constant
Crossref DOI link: https://doi.org/10.1007/s11664-019-07062-4
Published Online: 2019-02-25
Published Print: 2019-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kumari, Anjana
Rani, Suman
Singh, Balwinder http://orcid.org/0000-0001-6659-7397
Text and Data Mining valid from 2019-02-25
Article History
Received: 3 August 2017
Accepted: 12 February 2019
First Online: 25 February 2019